Rohm Semiconductor RTF016N05FRATL

安装类型

表面贴装

包装/外壳

3-SMD, Flat Leads

供应商器件包装

TUMT3

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

1.6A (Ta)

Power Dissipation (Max)

800mW

Base Product Number

RTF016

Continuous Drain Current

1.6(A)

Drain-Source On-Volt

45(V)

Operating Temperature Classification

Military

Package Type

TUMT

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±12(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

表面贴装

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Continuous Drain Current Id

1.6A

Vds - Drain-Source Breakdown Voltage

45 V

Vgs th - Gate-Source Threshold Voltage

1.5 V

Pd - Power Dissipation

800 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Minimum Operating Temperature

-

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Part # Aliases

RTF016N05FRA

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

2.3 nC

Rds On - Drain-Source Resistance

190 mOhms

RoHS

Details

Id - Continuous Drain Current

1.6 A

系列

Automotive, AEC-Q101

操作温度

150°C

包装

卷带

类型

小信号

子类别

MOSFETs

引脚数量

3

极性

N

通道数量

1 Channel

功率耗散

0.8(W)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

190mOhm @ 1.6A, 4.5V

不同 Id 时 Vgs(th)（最大值）

1.5V @ 1mA

输入电容(Ciss)(Max)@Vds

150 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

2.3 nC @ 4.5 V

漏源电压 (Vdss)

45 V

Vgs（最大值）

±12V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET