ROHM Semiconductor RW4E045ATTCL1

安装类型

表面贴装

包装/外壳

DFN1616-7T

供应商器件包装

DFN1616-7T

Number of Elements per Chip

1

Package Type

DFN1616-7T

MSL

-

Qualification

-

Continuous Drain Current Id

4.5A

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

6 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

1.5 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

300

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

11 nC

Rds On - Drain-Source Resistance

48 mOhms

RoHS

Details

Typical Turn-Off Delay Time

37 ns

Id - Continuous Drain Current

4.5 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Rohm Semiconductor

Power Dissipation (Max)

1.5W (Ta)

Product Status

活跃

包装

切割胶带

操作温度

150°C (TJ)

系列

-

子类别

MOSFETs

技术

Si

引脚数量

7

配置

Single

通道数量

1 Channel

功率耗散

1.5W

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

48mOhm @ 4.5A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

485 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

11 nC @ 10 V

上升时间

8 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

功率MOSFET

信道型

P

场效应管特性

-

产品类别

MOSFET