ROHM Semiconductor RX3P07CBHC16

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220AB

Base Product Number

RX3P07

Channel Mode

Enhancement

Current - Continuous Drain (Id) @ 25℃

120A (Ta), 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Id - Continuous Drain Current

120 A

Maximum Operating Temperature

+ 150 C

厂商

Rohm Semiconductor

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Package

Tube

Pd - Power Dissipation

135 W

Power Dissipation (Max)

135W (Tc)

Product Status

活跃

Qg - Gate Charge

73 nC

Rds On - Drain-Source Resistance

5.2 mOhms

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

100 V

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

4 V

操作温度

150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

5.2mOhm @ 70A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1mA

输入电容(Ciss)(Max)@Vds

4650 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

73 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

场效应管特性

-