Rohm Semiconductor SCT2160KEHRC11

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247N

厂商

Rohm Semiconductor

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Power Dissipation (Max)

165W (Tc)

Continuous Drain Current Id

22A

Number of Elements per Chip

1

Package Type

TO-247N

Channel Mode

Enhancement

Id - Continuous Drain Current

22 A

Typical Turn-Off Delay Time

67 ns

RoHS

Details

Rds On - Drain-Source Resistance

208 mOhms

Qg - Gate Charge

62 nC

Brand

ROHM 半导体

Manufacturer

ROHM 半导体

Forward Transconductance - Min

2.4 S

Mounting Styles

通孔

Factory Pack QuantityFactory Pack Quantity

30

Vgs - Gate-Source Voltage

- 6 V, + 22 V

Maximum Operating Temperature

+ 175 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

165 W

Vgs th - Gate-Source Threshold Voltage

4 V

Typical Turn-On Delay Time

23 ns

Vds - Drain-Source Breakdown Voltage

1.2 kV

系列

Automotive, AEC-Q101

操作温度

175°C (TJ)

包装

Tube

子类别

MOSFETs

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

165W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

208mOhm @ 7A, 18V

不同 Id 时 Vgs(th)（最大值）

4V @ 2.5mA

输入电容(Ciss)(Max)@Vds

1200 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

62 nC @ 18 V

上升时间

25 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+22V, -6V

产品类别

MOSFET

晶体管类型

汽车功率MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET