Rohm Semiconductor SCT3017ALGC11

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247N

厂商

Rohm Semiconductor

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

118A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Power Dissipation (Max)

427W

Continuous Drain Current Id

118

Continuous Drain Current

118(A)

Drain-Source On-Volt

650(V)

Operating Temperature Classification

Military

Package Type

TO-247N

Operating Temp Range

-55C to 175C

Gate-Source Voltage (Max)

22(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

通孔

MSL

MSL 1 - Unlimited

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

30 ns

Vgs th - Gate-Source Threshold Voltage

5.6 V

Pd - Power Dissipation

427 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 4 V, + 22 V

Factory Pack QuantityFactory Pack Quantity

450

Mounting Styles

通孔

Part # Aliases

SCT3017AL

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

172 nC

Rds On - Drain-Source Resistance

17 mOhms

RoHS

Details

Typical Turn-Off Delay Time

64 ns

Id - Continuous Drain Current

118 A

系列

-

操作温度

175°C (TJ)

包装

Rail/Tube

类型

功率MOSFET

子类别

MOSFETs

引脚数量

3 +Tab

极性

N

配置

Single

通道数量

1 Channel

功率耗散

427

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

22.1mOhm @ 47A, 18V

不同 Id 时 Vgs(th)（最大值）

5.6V @ 23.5mA

输入电容(Ciss)(Max)@Vds

2884 pF @ 500 V

门极电荷(Qg)(最大)@Vgs

172 nC @ 18 V

上升时间

44 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

+22V, -4V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET