Rohm Semiconductor SCT3030AW7TL

包装/外壳

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

安装类型

表面贴装

供应商器件包装

TO-263-7

Base Product Number

SCT3030

Power Dissipation (Max)

267W

Current - Continuous Drain (Id) @ 25℃

70A (Tc)

Product Status

活跃

厂商

Rohm Semiconductor

Number of Elements per Chip

1

Package Type

TO-263-7

MSL

MSL 1 - Unlimited

Continuous Drain Current Id

70A

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

7 ns

Vgs th - Gate-Source Threshold Voltage

5.6 V

Pd - Power Dissipation

267 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 4 V, + 22 V

Unit Weight

0.056438 oz

Minimum Operating Temperature

-

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

9.4 S

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

104 nC

Rds On - Drain-Source Resistance

39 mOhms

RoHS

Details

Typical Turn-Off Delay Time

27 ns

Id - Continuous Drain Current

70 A

操作温度

175°C (TJ)

系列

-

包装

切割胶带

子类别

MOSFETs

引脚数量

7

通道数量

1 Channel

功率耗散

267W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

39mOhm @ 27A, 18V

不同 Id 时 Vgs(th)（最大值）

5.6V @ 13.3mA

输入电容(Ciss)(Max)@Vds

1526 pF @ 500 V

门极电荷(Qg)(最大)@Vgs

104 nC @ 18 V

上升时间

22 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

+22V, -4V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET