ROHM Semiconductor SCT3160KW7HRTL

安装类型

表面贴装

包装/外壳

8-SOIC (0.154, 3.90mm Width)

供应商器件包装

8-SOIC

Package

Tape & Reel (TR);Cut Tape (CT);

Base Product Number

SI4776

Current - Continuous Drain (Id) @ 25℃

11.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Vishay Siliconix

Power Dissipation (Max)

4.1W (Tc)

Product Status

Obsolete

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

5.6 V

Pd - Power Dissipation

59 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

42 nC

Rds On - Drain-Source Resistance

208 mOhms

Id - Continuous Drain Current

17 A

操作温度

-55°C ~ 150°C (TA)

系列

SkyFET®, TrenchFET®

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

16mOhm @ 10A, 10V

不同 Id 时 Vgs(th)（最大值）

2.3V @ 1mA

输入电容(Ciss)(Max)@Vds

521 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

17.5 nC @ 10 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

场效应管特性

-