Rohm Semiconductor SCT4026DRHRC15

安装类型

通孔

包装/外壳

TO-247-4

供应商器件包装

TO-247-4L

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Power Dissipation (Max)

176W

Package Type

TO-247-4L

Vds - Drain-Source Breakdown Voltage

750 V

Typical Turn-On Delay Time

9.5 ns

Vgs th - Gate-Source Threshold Voltage

4.8 V

Pd - Power Dissipation

176 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 4 V, + 21 V

Factory Pack QuantityFactory Pack Quantity

450

Mounting Styles

通孔

Forward Transconductance - Min

16 S

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

94 nC

Rds On - Drain-Source Resistance

26 mOhms

RoHS

Details

Typical Turn-Off Delay Time

45 ns

Id - Continuous Drain Current

56 A

操作温度

175°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

34mOhm @ 29A, 18V

不同 Id 时 Vgs(th)（最大值）

4.8V @ 15.4mA

输入电容(Ciss)(Max)@Vds

2320 pF @ 500 V

门极电荷(Qg)(最大)@Vgs

94 nC @ 18 V

上升时间

22 ns

漏源电压 (Vdss)

750 V

Vgs（最大值）

+21V, -4V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET