ROHM Semiconductor SCT4036KW7TL

包装/外壳

TO-263-7L

安装类型

表面贴装

供应商器件包装

TO-263-7L

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

40 A

Rds On - Drain-Source Resistance

36 mOhms

Vgs - Gate-Source Voltage

- 4 V, + 21 V

Vgs th - Gate-Source Threshold Voltage

4.8 V

Qg - Gate Charge

91 nC

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

150 W

Channel Mode

Enhancement

Fall Time

9.6 ns

Forward Transconductance - Min

36 mOhms

Factory Pack QuantityFactory Pack Quantity

1000

Typical Turn-Off Delay Time

29 ns

Typical Turn-On Delay Time

8.1 ns

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

40A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

18V

厂商

Rohm Semiconductor

Power Dissipation (Max)

150W

Product Status

活跃

MSL

-

Continuous Drain Current Id

40A

包装

MouseReel

操作温度

175°C (TJ)

系列

-

配置

Single

通道数量

1 Channel

功率耗散

150W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

47mOhm @ 21A, 18V

不同 Id 时 Vgs(th)（最大值）

4.8V @ 11.1mA

输入电容(Ciss)(Max)@Vds

2335 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

91 nC @ 18 V

上升时间

15 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+21V, -4V

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-