Rohm Semiconductor SP8M41HZGTB

安装类型

表面贴装

包装/外壳

8-SOIC (0.154", 3.90mm Width)

供应商器件包装

8-SOP

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

3.4A (Ta), 2.6A (Ta)

Vds - Drain-Source Breakdown Voltage

80 V

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Qualification

AEC-Q101

Pd - Power Dissipation

2 W

Transistor Polarity

N-Channel, P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

9.2 nC

Rds On - Drain-Source Resistance

130 mOhms

RoHS

Details

Typical Turn-Off Delay Time

40 ns

Id - Continuous Drain Current

3.4 A, 2.6 A

系列

Automotive, AEC-Q101

操作温度

150°C (TJ)

包装

切割胶带

子类别

MOSFETs

技术

Si

配置

Dual

通道数量

2 Channel

功率 - 最大

2W (Ta)

场效应管类型

N and P-Channel

Rds On(Max)@Id,Vgs

130mOhm @ 3.4A, 10V, 240mOhm @ 2.6A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

600pF @ 10V, 1000pF @ 10V

门极电荷(Qg)(最大)@Vgs

9.2nC @ 5V, 11.5nC @ 5V

上升时间

15 ns

漏源电压 (Vdss)

80V

产品类别

MOSFET

晶体管类型

1 N-Channel, 1 P-Channel

场效应管特性

Standard

产品类别

MOSFET