ROHM Semiconductor UT6JC5TCR

安装类型

表面贴装

包装/外壳

DFN2020-8D

供应商器件包装

HUML2020L8

Package

Bulk

Base Product Number

120066

厂商

Molex

Product Status

活跃

Number of Elements per Chip

2

Package Type

DFN2020

Qualification

-

Transistor Polarity

P Channel

Continuous Drain Current Id

2.5A

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

7.4 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 10 V, + 10 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

6.3 nC

Rds On - Drain-Source Resistance

280 mOhms

RoHS

Details

Typical Turn-Off Delay Time

42 ns

Id - Continuous Drain Current

2.5 A

Current - Continuous Drain (Id) @ 25℃

2.5A (Ta)

系列

*

包装

切割胶带

操作温度

150°C (TJ)

子类别

MOSFETs

技术

Si

引脚数量

8

配置

Dual

通道数量

2 Channel

功率 - 最大

2W (Ta)

场效应管类型

2 P-Channel (Dual)

Rds On(Max)@Id,Vgs

280mOhm @ 2.5A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

265pF @ 30V

门极电荷(Qg)(最大)@Vgs

6.3nC @ 10V

上升时间

5 ns

漏源电压 (Vdss)

60V

产品类别

MOSFET

晶体管类型

2 P - Channel

信道型

P

场效应管特性

Standard

产品类别

MOSFET