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价格梯度
内地含税价
1
¥18.0522
10
¥17.030381
100
¥16.066396
500
¥15.15698
1000
¥14.299032
STMicroelectronics STGB30H65DFB2
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STGB30H65DFB2
2381-STGB30H65DFB2
晶体管 - IGBT - 单个
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
大陆
立即发货

Transistor IGBT Chip N-Channel 650V 30A 3-Pin D2PAK T/R
--最小包装量--
¥
总价: ¥
STGB30H65DFB2详情
STMicroelectronics STGB30H65DFB2重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
安装类型
表面贴装
供应商器件包装
D2PAK-3
Collector-Emitter Saturation Voltage
1.65
Maximum Gate Emitter Voltage
±20V
Package Type
D2PAK (TO-263)
Maximum Collector Emitter Voltage
650 V
MSL
MSL 1 - Unlimited
Pd - Power Dissipation
167 W
Maximum Operating Temperature
+ 175 C
Unit Weight
0.048678 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1000
Continuous Collector Current at 25 C
50 A
Mounting Styles
SMD/SMT
Manufacturer
STMicroelectronics
Brand
STMicroelectronics
RoHS
Details
Collector- Emitter Voltage VCEO Max
650 V
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current-Collector (Ic) (Max)
50 A
Base Product Number
STGB30
厂商
STMicroelectronics
Test Conditions
400V, 30A, 6.8Ohm, 15V
Product Status
活跃
包装
MouseReel
操作温度
-55°C ~ 175°C (TJ)
系列
HB2
子类别
IGBTs
技术
Si
引脚数量
3
配置
Single
功率耗散
167
输入类型
Standard
功率 - 最大
167 W
产品类别
IGBT晶体管
电压 - 集射极击穿(最大值)
650 V
不同 Vge、Ic 时 Vce(on)(最大值)
2.1V @ 15V, 30A
连续集电极电流
50
IGBT类型
沟渠现场停车
闸门收费
90 nC
集极脉冲电流(Icm)
90 A
Td(开/关)@25°C
18.4ns/71ns
开关能量
270µJ (on), 310µJ (off)
反向恢复时间(trr)
115 ns
产品类别
IGBT晶体管
STGB30H65DFB2拓展信息
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