STMicroelectronics STGWA20IH65DF
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STGWA20IH65DF
2381-STGWA20IH65DF
晶体管 - IGBT - 单个
TO-247-3
大陆
立即发货

TRENCH GATE FIELD-STOP 650 V, 20
--最小包装量--
STGWA20IH65DF详情
STMicroelectronics STGWA20IH65DF重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-3
供应商器件包装
TO-247 Long Leads
厂商
STMicroelectronics
Package
Tube
Product Status
活跃
Current-Collector (Ic) (Max)
40 A
Test Conditions
400V, 20A, 22Ohm, 15V
Base Product Number
STGWA20
Collector-Emitter Saturation Voltage
1.55
Maximum Gate Emitter Voltage
- 20 V, + 20 V
Pd - Power Dissipation
159 W
Maximum Operating Temperature
+ 175 C
Unit Weight
0.215171 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
600
Continuous Collector Current at 25 C
40 A
Mounting Styles
通孔
Manufacturer
STMicroelectronics
Brand
STMicroelectronics
Continuous Collector Current Ic Max
20 A
RoHS
Details
Collector- Emitter Voltage VCEO Max
650 V
系列
IH
操作温度
-55°C ~ 175°C (TJ)
包装
Tube
子类别
IGBTs
技术
Si
配置
Single
功率耗散
159
输入类型
Standard
功率 - 最大
159 W
产品类别
IGBT晶体管
电压 - 集射极击穿(最大值)
650 V
不同 Vge、Ic 时 Vce(on)(最大值)
2.05V @ 15V, 20A
连续集电极电流
40
IGBT类型
沟渠现场停车
闸门收费
56 nC
集极脉冲电流(Icm)
60 A
Td(开/关)@25°C
-/120ns
开关能量
110μJ (off)
产品类别
IGBT晶体管
STGWA20IH65DF拓展信息
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