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价格梯度
内地含税价
1
¥45.353304
10
¥42.786133
100
¥40.364278
500
¥38.079509
1000
¥35.924064
STMicroelectronics STGYA50H120DF2
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STGYA50H120DF2
2381-STGYA50H120DF2
晶体管 - IGBT - 单个
TO-247-3
大陆
立即发货

TRENCH GATE FIELD-STOP, 1200 V,
--最小包装量--
¥
总价: ¥
STGYA50H120DF2详情
STMicroelectronics STGYA50H120DF2重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-3
供应商器件包装
TO-247
厂商
STMicroelectronics
Package
Tube
Product Status
活跃
Current-Collector (Ic) (Max)
100 A
Test Conditions
600V, 50A, 10Ohm, 15V
Base Product Number
STGYA50
Maximum Gate Emitter Voltage
±20V
Package Type
Max247 long leads
Maximum Collector Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.1V
Pd - Power Dissipation
535 W
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Continuous Collector Current at 25 C
100 A
Mounting Styles
通孔
Collector- Emitter Voltage VCEO Max
1.2 kV
系列
-
操作温度
-55°C ~ 175°C (TJ)
技术
Si
配置
Series
功率耗散
535W
输入类型
Standard
功率 - 最大
535 W
电压 - 集射极击穿(最大值)
1200 V
不同 Vge、Ic 时 Vce(on)(最大值)
2.6V @ 15V, 50A
连续集电极电流
100A
IGBT类型
沟渠现场停车
闸门收费
210 nC
集极脉冲电流(Icm)
200 A
Td(开/关)@25°C
40ns/284ns
开关能量
2mJ (on), 2.1mJ (off)
反向恢复时间(trr)
340 ns
STGYA50H120DF2拓展信息
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