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价格梯度
内地含税价
1
¥47.736434
10
¥45.03437
100
¥42.48526
500
¥40.080432
1000
¥37.811724
STMicroelectronics STGYA50M120DF3
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STGYA50M120DF3
2381-STGYA50M120DF3
晶体管 - IGBT - 单个
TO-247-3
大陆
立即发货

TRENCH GATE FIELD-STOP, 1200 V,
--最小包装量--
¥
总价: ¥
STGYA50M120DF3详情
STMicroelectronics STGYA50M120DF3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-3
厂商
STMicroelectronics
Package
Tube
Product Status
活跃
Current-Collector (Ic) (Max)
100 A
Test Conditions
600V, 50A, 10Ohm, 15V
Base Product Number
STGYA50
Maximum Gate Emitter Voltage
20V
Package Type
Max247
Maximum Collector Emitter Voltage
1200 V
Pd - Power Dissipation
535 W
Maximum Operating Temperature
+ 175 C
Collector-Emitter Saturation Voltage
2.1 V
Unit Weight
0.156264 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
30
Continuous Collector Current at 25 C
100 A
Mounting Styles
通孔
Manufacturer
STMicroelectronics
Brand
STMicroelectronics
RoHS
Details
Collector- Emitter Voltage VCEO Max
1.2 kV
系列
-
操作温度
-55°C ~ 175°C (TJ)
包装
Tube
子类别
IGBTs
技术
Si
配置
Single
输入类型
Standard
功率 - 最大
535 W
产品类别
IGBT晶体管
电压 - 集射极击穿(最大值)
1200 V
不同 Vge、Ic 时 Vce(on)(最大值)
2.2V @ 15V, 50A
IGBT类型
沟渠现场停车
闸门收费
194 nC
集极脉冲电流(Icm)
200 A
Td(开/关)@25°C
38ns/258ns
开关能量
2mJ (on), 3.2mJ (off)
反向恢复时间(trr)
325 ns
产品类别
IGBT晶体管
STGYA50M120DF3拓展信息
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