Winbond Electronics Corporation W63CH6MBVABE
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W63CH6MBVABE
2736-W63CH6MBVABE
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W63CH6MBVABE datasheet pdf and Memory product details from Winbond Electronics Corporation stock available at utmel
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W63CH6MBVABE详情
Winbond Electronics Corporation W63CH6MBVABE重要参数规格及、参数值,及相似型号如下:
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EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
DRAM Type
Mobile LPDDR3 SDRAM
Chip Density (bit)
4G
Number of Internal Banks
8
Number of Words per Bank
32M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
800
Maximum Access Time (ns)
5.5
Address Bus Width (bit)
17
Interface Type
HSUL_12
Minimum Operating Supply Voltage (V)
1.7|1.14
Typical Operating Supply Voltage (V)
1.8|1.2
Maximum Operating Supply Voltage (V)
1.95|1.3
Operating Current (mA)
250
Minimum Operating Temperature (°C)
-25
Maximum Operating Temperature (°C)
85
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Height
0.67
Package Width
11
Package Length
11.5
PCB changed
178
Supplier Package
VFBGA
Supply Voltage-Nom (Vsup)
1.8V / 1.2V
零件状态
Obsolete
类型
Low Power DDR3 SDRAM
引脚数量
178
速度
800/933MHz
组织结构
256Mx16
记忆密度
4Gb
温度
-25ºC~85ºC, -40ºC~85ºC
W63CH6MBVABE拓展信息
Winbond Electronics
Winbond Electronics
Winbond Electronics
Winbond Electronics
Winbond Electronics
Winbond Electronics
Winbond Electronics
Winbond Electronics
Winbond Electronics
Winbond Electronics







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