Winbond Electronics Corporation W97BH6LBVX2E TR
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W97BH6LBVX2E TR
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W97BH6LBVX2E TR datasheet pdf and Memory product details from Winbond Electronics Corporation stock available at utmel
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W97BH6LBVX2E TR详情
Winbond Electronics Corporation W97BH6LBVX2E TR重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
引脚数
134
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8542.32.00.36
DRAM Type
Mobile LPDDR2 SDRAM
Chip Density (bit)
2G
Number of Internal Banks
8
Number of Words per Bank
16M
Number of Bits/Word (bit)
16
Data Bus Width (bit)
16
Maximum Clock Rate (MHz)
400
Maximum Access Time (ns)
5.5
Address Bus Width (bit)
17
Interface Type
HSUL_12
Minimum Operating Supply Voltage (V)
1.14|1.7
Typical Operating Supply Voltage (V)
1.2|1.8
Maximum Operating Supply Voltage (V)
1.3|1.95
Operating Current (mA)
190
Minimum Operating Temperature (°C)
-25
Maximum Operating Temperature (°C)
85
Number of I/O Lines (bit)
16
Mounting
表面贴装
Package Height
0.58
Package Width
10
Package Length
11.5
PCB changed
134
Supplier Package
VFBGA
零件状态
NRND
组织结构
128Mx16
W97BH6LBVX2E TR拓展信息
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