参数名
参数值
参数名
参数值
包装/外壳
SOT-123
RoHS
Details
Collector- Emitter Voltage VCEO Max
35 V
Emitter- Base Voltage VEBO
3 V
Pd - Power Dissipation
245 W
Transistor Polarity
NPN
Maximum Operating Temperature
+ 200 C
DC Collector/Base Gain hfe Min
15
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
螺钉安装
Manufacturer
Advanced Semiconductor, Inc.
Brand
Advanced Semiconductor, Inc.
Maximum DC Collector Current
30 A
包装
Tray
类型
射频双极功率
子类别
Transistors
技术
Si
工作频率
28 MHz
产品类别
射频双极晶体管
晶体管类型
双极电源
连续集电极电流
12 A
产品类别
射频双极晶体管