Microchip APTM100A13SG

安装类型

底座安装

包装/外壳

SP6

供应商器件包装

SP6

Continuous Drain Current Id

65

Package

Bulk

Base Product Number

APTM100

Current - Continuous Drain (Id) @ 25℃

65A

厂商

微芯片技术

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

1 kV

Typical Turn-On Delay Time

9 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

1.25 kW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

30 V

Unit Weight

3.880136 oz

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

螺钉安装

Manufacturer

Microchip

Brand

微芯片技术

Tradename

POWER MOS 7

Rds On - Drain-Source Resistance

130 mOhms

RoHS

Details

Typical Turn-Off Delay Time

50 ns

Id - Continuous Drain Current

65 A

操作温度

-40°C ~ 150°C (TJ)

系列

-

包装

Tube

子类别

Discrete Semiconductor Modules

技术

MOSFET (Metal Oxide)

配置

2 N-Channel (Half Bridge)

通道数量

1 Channel

功率耗散

1.25

功率 - 最大

1250W

Rds On(Max)@Id,Vgs

156mOhm @ 32.5A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 6mA

输入电容(Ciss)(Max)@Vds

15200pF @ 25V

门极电荷(Qg)(最大)@Vgs

562nC @ 10V

上升时间

9 ns

漏源电压 (Vdss)

1000V (1kV)

产品类别

Discrete Semiconductor Modules

信道型

Dual N

场效应管特性

-

产品

功率MOSFET模块

产品类别

Discrete Semiconductor Modules

宽度

62 mm

高度

21.9 mm

长度

108 mm