Microchip MSCSM120VR1M16CTPAG

包装/外壳

DO-214AB-2

安装类型

底座安装

供应商器件包装

-

Breakdown Voltage / V

198 V

Maximum Operating Temperature

+ 150 C

Vesd - Voltage ESD Contact

30 kV

Unit Weight

0.008201 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

800

Ipp - Peak Pulse Current

10.3 A

Pppm - Peak Pulse Power Dissipation

3 kW

Manufacturer

Panjit

Brand

Panjit

Vesd - Voltage ESD Air Gap

30 kV

Package

Bulk

Base Product Number

MSCSM120

Current - Continuous Drain (Id) @ 25℃

171A (Tc)

厂商

微芯片技术

Product Status

活跃

Vr - Reverse Voltage

1700 V

Vds - Drain-Source Breakdown Voltage

1200 V

Vgs th - Gate-Source Threshold Voltage

2.8 V

Pd - Power Dissipation

728 W

Vgs - Gate-Source Voltage

- 10 V, + 23 V

Mounting Styles

螺钉安装

Rds On - Drain-Source Resistance

16 mOhms

RoHS

Details

Id - Continuous Drain Current

171 A

系列

TSM-30H

包装

Reel

操作温度

-40°C ~ 175°C (TJ)

类型

MOSFET Power Module

子类别

TVS Diodes / ESD Suppression Diodes

技术

Silicon Carbide (SiC)

终端样式

SMD/SMT

工作电压

180 V

极性

单向

配置

6 N-Channel (Phase Leg)

通道数量

1 Channel

功率 - 最大

728W (Tc)

箝位电压

292 V

Rds On(Max)@Id,Vgs

16mOhm @ 80A, 20V

不同 Id 时 Vgs(th)（最大值）

2.8V @ 6mA

输入电容(Ciss)(Max)@Vds

6040pF @ 1000V

门极电荷(Qg)(最大)@Vgs

464nC @ 20V

漏源电压 (Vdss)

1200V (1.2kV)

产品类别

TVS 二极管

场效应管特性

-

产品

Rectifier Modules

Vf-正向电压

1.8 V

产品类别

ESD Suppressors / TVS Diodes