Microchip Technology MSC017SMA120J

包装/外壳

SOT-227-4

厂商

微芯片技术

Package

Bulk

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

278 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 23 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

螺钉安装

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Qg - Gate Charge

249 nC

Rds On - Drain-Source Resistance

17.6 mOhms

Id - Continuous Drain Current

88 A

系列

-

包装

Tube

子类别

MOSFETs

技术

SiC

配置

Single

通道数量

1 Channel

产品类别

MOSFET

产品类别

MOSFET