Nexperia PSMN023-40YLCX

EU RoHS

供应商未确认

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

NextPower

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

20

Maximum Gate Threshold Voltage (V)

1.95

Maximum Continuous Drain Current (A)

24

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

23@10V

Typical Gate Charge @ Vgs (nC)

8.4@10V|8@10V|[email protected]

Typical Gate Charge @ 10V (nC)

8.4|8

Typical Input Capacitance @ Vds (pF)

520@20V

Maximum Power Dissipation (mW)

25000

Typical Fall Time (ns)

3.1

Typical Rise Time (ns)

3.8

Typical Turn-Off Delay Time (ns)

9.9

Typical Turn-On Delay Time (ns)

6.2

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

1.1(Max)

Package Width

4.1(Max)

Package Length

5(Max)

PCB changed

4

Tab

Tab

Supplier Package

LFPAK

零件状态

Obsolete

引脚数量

5

配置

单一三源

信道型

N