STMicroelectronics STE53NA50
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STE53NA50
2381-STE53NA50
晶体管 - FET,MOSFET - 阵列
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STE53NA50 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available at utmel
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STE53NA50详情
STMicroelectronics STE53NA50重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
EU RoHS
供应商未确认
ECCN (US)
EAR99
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
500
Maximum Gate Source Voltage (V)
±30
Maximum Continuous Drain Current (A)
53
Maximum Drain Source Resistance (mOhm)
85@10V
Typical Gate Charge @ Vgs (nC)
470@10V
Typical Gate Charge @ 10V (nC)
470
Typical Input Capacitance @ Vds (pF)
13000@25V
Maximum Power Dissipation (mW)
460000
Typical Fall Time (ns)
36
Typical Rise Time (ns)
92
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
Screw
Package Height
9.1(Max)
Supplier Package
ISOTOP
PCB changed
4
Package Length
38.2(Max)
Package Width
25.5(Max)
RoHS
Non-Compliant
零件状态
Obsolete
引脚数量
4
配置
单双源
信道型
N
STE53NA50拓展信息
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