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价格梯度
内地含税价
1
¥25.981728
10
¥24.511063
100
¥23.123642
500
¥21.814762
1000
¥20.579964
STMicroelectronics STGH30H65DFB-2AG
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- 对比
STGH30H65DFB-2AG
2381-STGH30H65DFB-2AG
晶体管 - IGBT - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

AUTOMOTIVE-GRADE TRENCH GATE FIE
--最小包装量--
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总价: ¥
STGH30H65DFB-2AG详情
STMicroelectronics STGH30H65DFB-2AG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
供应商器件包装
H2Pak-2
厂商
STMicroelectronics
Product Status
活跃
Current-Collector (Ic) (Max)
60 A
Test Conditions
400V, 30A, 10Ohm, 15V
Base Product Number
STGH30H
Maximum Gate Emitter Voltage
20V
Package Type
H2PAK-2
Maximum Collector Emitter Voltage
650 V
Qualification
AEC-Q101
Pd - Power Dissipation
260 W
Maximum Operating Temperature
+ 175 C
Collector-Emitter Saturation Voltage
1.55 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1000
Continuous Collector Current at 25 C
60 A
Mounting Styles
通孔
Manufacturer
STMicroelectronics
Brand
STMicroelectronics
RoHS
Details
Collector- Emitter Voltage VCEO Max
650 V
操作温度
-55°C ~ 175°C (TJ)
包装
切割胶带
子类别
IGBTs
技术
Si
配置
Single
输入类型
Standard
功率 - 最大
260 W
产品类别
IGBT晶体管
电压 - 集射极击穿(最大值)
650 V
不同 Vge、Ic 时 Vce(on)(最大值)
2V @ 15V, 30A
IGBT类型
沟渠现场停车
闸门收费
155 nC
集极脉冲电流(Icm)
90 A
Td(开/关)@25°C
24ns/170ns
开关能量
555μJ (on), 300μJ (off)
反向恢复时间(trr)
28 ns
产品类别
IGBT晶体管
STGH30H65DFB-2AG拓展信息
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