Vishay Intertechnologies SI7220DN-T1-E3
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SI7220DN-T1-E3
2668-SI7220DN-T1-E3
晶体管 - 特殊用途
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大陆
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Power Field-Effect Transistor, 3.4A I(D), 60V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8
1最小包装量--
SI7220DN-T1-E3详情
Vishay Intertechnologies SI7220DN-T1-E3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
Contact plating
gold-plated
Number of pins
14
终端数量
6
晶体管元件材料
SILICON
外壳材料
2
Rohs Code
有
Part Life Cycle Code
生命周期结束
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
ROHS COMPLIANT, 1212-8, POWERPAK-8
Drain Current-Max (ID)
3.4 A
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
SQUARE
Package Style
小概要
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
2mm
Electrical mounting
SMT
Connector pinout layout
2x7
Row pitch
2mm
Gross weight
0.69 g
Operating temperature
-40...163°C
ECCN 代码
EAR99
端子表面处理
Pure Matte Tin (Sn)
端子位置
DUAL
终端形式
C 弯管
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
Current rating
2.5A
时间@峰值回流温度-最大值(s)
30
JESD-30代码
S-XDSO-C6
资历状况
不合格
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.06 Ω
脉冲漏极电流-最大值(IDM)
20 A
DS 击穿电压-最小值
60 V
雪崩能量等级(Eas)
6.1 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
2.6 W
Rated voltage
100V
个人资料
beryllium copper
饱和电流
1
Plating thickness
0.254µm
Flammability rating
UL94V-0
SI7220DN-T1-E3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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