Vishay Intertechnologies SI7143DP-T1-GE3
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SI7143DP-T1-GE3
2668-SI7143DP-T1-GE3
晶体管 - 特殊用途
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大陆
立即发货

Description: Power Field-Effect Transistor, 35A I(D), 30V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
1最小包装量--
SI7143DP-T1-GE3详情
Vishay Intertechnologies SI7143DP-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
18 Weeks
表面安装
YES
Housing material
Nylon 66 UL94V-0
终端数量
5
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Drain Current-Max (ID)
35 A
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
小概要
Gross Weight
1.91
Transport packaging size/quantity
48*32*27/10000
Cable type
interboard power cable (socket) series 1007
Wire cross-section
0.129 mm2
Wire insulation color
red, black
Wire length
280 mm
Mating part
W-02 pitch 2.54mm
Number of wires
2
JESD-609代码
e3
ECCN 代码
EAR99
Connector type
C3
端子表面处理
Matte Tin (Sn)
端子位置
DUAL
终端形式
C 弯管
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
时间@峰值回流温度-最大值(s)
30
JESD-30代码
R-XDSO-C5
Number of contacts
2
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
P-CHANNEL
Operating temperature range
0…+80 °C
漏极-源极导通最大电阻
0.01 Ω
脉冲漏极电流-最大值(IDM)
60 A
DS 击穿电压-最小值
30 V
雪崩能量等级(Eas)
31.25 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
35.7 W
Connector pitch
2.54 mm
饱和电流
1
SI7143DP-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
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