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价格梯度
内地含税价
1
¥30.053624
10
¥28.352473
100
¥26.747619
500
¥25.2336
1000
¥23.805282
Vishay Intertechnologies SI7430DP-T1-E3
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SI7430DP-T1-E3
2668-SI7430DP-T1-E3
晶体管 - 特殊用途
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Description: Power Field-Effect Transistor, 7.2A I(D), 150V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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¥
总价: ¥
SI7430DP-T1-E3详情
Vishay Intertechnologies SI7430DP-T1-E3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
Housing material
Alloy / heat-resistant plastic
终端数量
5
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Drain Current-Max (ID)
7.2 A
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
小概要
Gross weight
29.30
Transport packaging size/quantity
48*32*22.5/500
Mounting method
in panel
Application area
for cars, motorcycles, boats, etc.
Nominal voltage
12 / 24 V
Maximum current
15/ 10 (12 V/ 24 V) A
Size of mounting hole
26 mm
Maximum load power
120 W
JESD-609代码
e3
ECCN 代码
EAR99
类型
Socket (plug) with cover
端子表面处理
Matte Tin (Sn) - annealed
颜色
metallic/black
端子位置
DUAL
终端形式
C 弯管
峰值回流焊温度(摄氏度)
260
深度
60 mm
Reach合规守则
compliant
时间@峰值回流温度-最大值(s)
30
JESD-30代码
R-XDSO-C5
资历状况
不合格
Number of contacts
2 poles
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
Rated current
15 / 10 A
漏极-源极导通最大电阻
0.047 Ω
脉冲漏极电流-最大值(IDM)
50 A
DS 击穿电压-最小值
150 V
雪崩能量等级(Eas)
20 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
64 W
饱和电流
1
宽度
Ф26 mm
SI7430DP-T1-E3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies






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