Vishay Intertechnologies SIHFR020TR-GE3
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SIHFR020TR-GE3
2668-SIHFR020TR-GE3
晶体管 - 特殊用途
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大陆
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Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
1最小包装量--
SIHFR020TR-GE3详情
Vishay Intertechnologies SIHFR020TR-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Contact plating
gold-plated
表面安装
YES
Number of pins
2
终端数量
2
晶体管元件材料
SILICON
外壳材料
1
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
2.54mm
Electrical mounting
THT
Connector pinout layout
1x2
Gross weight
0.17 g
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Drain Current-Max (ID)
14 A
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Operating temperature
-40...163°C
ECCN 代码
EAR99
端子位置
SINGLE
终端形式
鸥翼
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
unknown
Current rating
1.5A
时间@峰值回流温度-最大值(s)
未说明
JESD-30代码
R-PSSO-G2
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-252AA
漏极-源极导通最大电阻
0.1 Ω
脉冲漏极电流-最大值(IDM)
56 A
DS 击穿电压-最小值
60 V
雪崩能量等级(Eas)
91 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
42 W
Rated voltage
60V
个人资料
beryllium copper
Plating thickness
0.75µm
Flammability rating
UL94V-0
SIHFR020TR-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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