Microchip APTM10HM19FT3G

安装类型

底座安装

包装/外壳

SP3

供应商器件包装

SP3

RoHS

Non-Compliant

Continuous Drain Current Id

70

Package

Bulk

Base Product Number

APTM10

Current - Continuous Drain (Id) @ 25℃

70A

厂商

微芯片技术

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

35 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

208 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

5.123896 oz

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

螺钉安装

Manufacturer

Microchip

Brand

微芯片技术

Tradename

POWER MOS V

Rds On - Drain-Source Resistance

19 mOhms

Typical Turn-Off Delay Time

95 ns

Id - Continuous Drain Current

70 A

操作温度

-40°C ~ 150°C (TJ)

系列

-

包装

Tube

类型

全桥

子类别

Discrete Semiconductor Modules

技术

MOSFET (Metal Oxide)

配置

4 N-Channel (Half Bridge)

通道数量

1 Channel

功率 - 最大

208W

Rds On(Max)@Id,Vgs

21mOhm @ 35A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1mA

输入电容(Ciss)(Max)@Vds

5100pF @ 25V

门极电荷(Qg)(最大)@Vgs

200nC @ 10V

上升时间

70 ns

漏源电压 (Vdss)

100V

产品类别

Discrete Semiconductor Modules

信道型

Dual N

场效应管特性

-

产品

功率MOSFET模块

产品类别

Discrete Semiconductor Modules

宽度

40.8 mm

高度

11.5 mm

长度

73.4 mm