APTM120H29FG详情
Microchip APTM120H29FG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
底座安装
包装/外壳
SP6
供应商器件包装
SP6
Continuous Drain Current Id
34
Package
Bulk
Base Product Number
APTM120
Current - Continuous Drain (Id) @ 25℃
34A
厂商
微芯片技术
Product Status
活跃
Factory Pack QuantityFactory Pack Quantity
1
Manufacturer
Microchip
Brand
微芯片技术
RoHS
Details
操作温度
-40°C ~ 150°C (TJ)
系列
POWER MOS 7®
包装
Tube
子类别
Discrete Semiconductor Modules
技术
MOSFET (Metal Oxide)
配置
4 N-Channel (Half Bridge)
功率 - 最大
780W
Rds On(Max)@Id,Vgs
348mOhm @ 17A, 10V
不同 Id 时 Vgs(th)(最大值)
5V @ 5mA
输入电容(Ciss)(Max)@Vds
10300pF @ 25V
门极电荷(Qg)(最大)@Vgs
374nC @ 10V
漏源电压 (Vdss)
1200V (1.2kV)
产品类别
Discrete Semiconductor Modules
信道型
Dual N
场效应管特性
-
产品类别
Discrete Semiconductor Modules
APTM120H29FG拓展信息
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
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