Microchip APTM50H15FT1G

安装类型

底座安装

包装/外壳

SP1

供应商器件包装

SP1

Continuous Drain Current Id

25

Package

Bulk

Base Product Number

APTM50

Current - Continuous Drain (Id) @ 25℃

25A

厂商

微芯片技术

Product Status

活跃

Typical Turn-On Delay Time

29 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

208 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 100 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

2.821917 oz

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

螺钉安装

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Rds On - Drain-Source Resistance

130 mOhms

RoHS

Details

Typical Turn-Off Delay Time

80 ns

Id - Continuous Drain Current

25 A

操作温度

-40°C ~ 150°C (TJ)

系列

-

包装

Tube

类型

全桥

子类别

Discrete Semiconductor Modules

技术

MOSFET (Metal Oxide)

配置

4 N-Channel (Half Bridge)

功率 - 最大

208W

Rds On(Max)@Id,Vgs

180mOhm @ 21A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

5448pF @ 25V

门极电荷(Qg)(最大)@Vgs

170nC @ 10V

上升时间

35 ns

漏源电压 (Vdss)

500V

产品类别

Discrete Semiconductor Modules

信道型

Dual N

场效应管特性

-

产品

功率MOSFET模块

产品类别

Discrete Semiconductor Modules