Microchip APTMC120TAM34CT3AG

安装类型

底座安装

包装/外壳

Module

供应商器件包装

SP3

Package

Bulk

Base Product Number

APTMC120

Current - Continuous Drain (Id) @ 25℃

74A (Tc)

厂商

微芯片技术

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

1200 V

Typical Turn-On Delay Time

21 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

375 W

Maximum Operating Temperature

+ 125 C

Vgs - Gate-Source Voltage

- 10 V, 25 V

Unit Weight

3.880136 oz

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

螺钉安装

Manufacturer

Microchip

Brand

微芯片技术

Rds On - Drain-Source Resistance

25 mOhms

Typical Turn-Off Delay Time

50 ns

Id - Continuous Drain Current

74 A

操作温度

-40°C ~ 175°C (TJ)

系列

-

包装

Tube

类型

3 Phase Bridge

子类别

Discrete Semiconductor Modules

技术

Silicon Carbide (SiC)

配置

6 N-Channel (3-Phase Bridge)

功率 - 最大

375W

Rds On(Max)@Id,Vgs

34mOhm @ 50A, 20V

不同 Id 时 Vgs(th)（最大值）

4V @ 15mA

输入电容(Ciss)(Max)@Vds

2788pF @ 1000V

门极电荷(Qg)(最大)@Vgs

161nC @ 5V

上升时间

19 ns

漏源电压 (Vdss)

1200V (1.2kV)

产品类别

Discrete Semiconductor Modules

场效应管特性

-

产品

功率MOSFET模块

Vf-正向电压

1.5 V

产品类别

Discrete Semiconductor Modules