APTMC60TLM55CT3AG详情
Microchip APTMC60TLM55CT3AG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
底座安装
包装/外壳
SP3
供应商器件包装
SP3
Continuous Drain Current Id
55
Package
Bulk
Base Product Number
APTMC60
Current - Continuous Drain (Id) @ 25℃
48A (Tc)
厂商
微芯片技术
Product Status
活跃
Package Description
,
Reflow Temperature-Max (s)
未说明
Operating Temperature-Max
125 °C
Rohs Code
有
Manufacturer Part Number
APTMC60TLM55CT3AG
Manufacturer
Microsemi Corporation
Number of Elements
1
Part Life Cycle Code
不推荐
Ihs Manufacturer
MICROSEMI CORP
Risk Rank
5.67
操作温度
-40°C ~ 150°C (TJ)
系列
-
ECCN 代码
EAR99
子类别
其他晶体管
技术
Silicon Carbide (SiC)
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
配置
4 N-Channel (Three Level Inverter)
功率 - 最大
250W
Rds On(Max)@Id,Vgs
49mOhm @ 40A, 20V
不同 Id 时 Vgs(th)(最大值)
2.2V @ 2mA (Typ)
输入电容(Ciss)(Max)@Vds
1900pF @ 1000V
门极电荷(Qg)(最大)@Vgs
98nC @ 20V
漏源电压 (Vdss)
1200V (1.2kV)
最大漏极电流 (Abs) (ID)
55 A
信道型
Dual N
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
250 W
场效应管特性
-
APTMC60TLM55CT3AG拓展信息
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