Microchip Technology MSCSM120HM083AG

安装类型

底座安装

包装/外壳

Module

供应商器件包装

-

厂商

微芯片技术

Package

Bulk

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

251A (Tc)

Vds - Drain-Source Breakdown Voltage

1200 V

Typical Turn-On Delay Time

66 ns

Vgs th - Gate-Source Threshold Voltage

1.8 V

Pd - Power Dissipation

1.042 kW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, 23 V

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

螺钉安装

Manufacturer

Microchip

Brand

微芯片技术

Rds On - Drain-Source Resistance

10.4 mOhms

RoHS

Details

Typical Turn-Off Delay Time

166 ns

Id - Continuous Drain Current

251 A

系列

-

操作温度

-40°C ~ 175°C (TJ)

类型

Full Bridge SiC Power Module

子类别

Discrete Semiconductor Modules

技术

SiC

配置

全桥

功率 - 最大

1.042kW (Tc)

场效应管类型

4 N-Channel (Full Bridge)

Rds On(Max)@Id,Vgs

10.4mOhm @ 120A, 20V

不同 Id 时 Vgs(th)（最大值）

2.8V @ 9mA

输入电容(Ciss)(Max)@Vds

9000pF @ 1000V

门极电荷(Qg)(最大)@Vgs

696nC @ 20V

上升时间

74 ns

漏源电压 (Vdss)

1200V (1.2kV)

产品类别

Discrete Semiconductor Modules

场效应管特性

Silicon Carbide (SiC)

产品

功率MOSFET模块

产品类别

Discrete Semiconductor Modules