Microchip Technology MSCSM120HM16TBL3NG

包装/外壳

Module

安装类型

底座安装

供应商器件包装

-

Current - Continuous Drain (Id) @ 25℃

150A

Product Status

活跃

Package

Bulk

厂商

微芯片技术

Vds - Drain-Source Breakdown Voltage

1200 V

Typical Turn-On Delay Time

30 ns

Vgs th - Gate-Source Threshold Voltage

1.8 V

Pd - Power Dissipation

560 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, 23 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

螺钉安装

Manufacturer

Microchip

Brand

微芯片技术

Rds On - Drain-Source Resistance

16 mOhms

RoHS

Details

Typical Turn-Off Delay Time

50 ns

Id - Continuous Drain Current

150 A

操作温度

-55°C ~ 175°C (TJ)

系列

-

类型

Dual Phase Leg SiC MOSFET Power Module

子类别

Discrete Semiconductor Modules

技术

SiC

配置

Dual

功率 - 最大

560W

场效应管类型

6 N-Channel (Phase Leg)

Rds On(Max)@Id,Vgs

16mOhm @ 80A, 20V

不同 Id 时 Vgs(th)（最大值）

2.8V @ 6mA

输入电容(Ciss)(Max)@Vds

6040pF @ 1000V

门极电荷(Qg)(最大)@Vgs

464nC @ 20V

上升时间

30 ns

漏源电压 (Vdss)

1200V (1.2kV)

产品类别

Discrete Semiconductor Modules

场效应管特性

Silicon Carbide (SiC)

产品

功率MOSFET模块

产品类别

Discrete Semiconductor Modules