Microchip Technology MSCSM120HM31T3AG

包装/外壳

Module

安装类型

底座安装

供应商器件包装

-

Current - Continuous Drain (Id) @ 25℃

89A (Tc)

Product Status

活跃

Package

Bulk

厂商

微芯片技术

Vds - Drain-Source Breakdown Voltage

1200 V

Typical Turn-On Delay Time

30 ns

Vgs th - Gate-Source Threshold Voltage

1.8 V

Pd - Power Dissipation

395 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, 23 V

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

螺钉安装

Manufacturer

Microchip

Brand

微芯片技术

Rds On - Drain-Source Resistance

31 mOhms

RoHS

Details

Typical Turn-Off Delay Time

50 ns

Id - Continuous Drain Current

89 A

操作温度

-40°C ~ 175°C (TJ)

系列

-

类型

Full Bridge SiC MOSFET Power Module

子类别

Discrete Semiconductor Modules

技术

SiC

配置

全桥

功率 - 最大

395W (Tc)

场效应管类型

4 N-Channel (Full Bridge)

Rds On(Max)@Id,Vgs

31mOhm @ 40A, 20V

不同 Id 时 Vgs(th)（最大值）

2.8V @ 3mA

输入电容(Ciss)(Max)@Vds

3020pF @ 1000V

门极电荷(Qg)(最大)@Vgs

232nC @ 20V

上升时间

30 ns

漏源电压 (Vdss)

1200V (1.2kV)

产品类别

Discrete Semiconductor Modules

场效应管特性

Silicon Carbide (SiC)

产品

功率MOSFET模块

产品类别

Discrete Semiconductor Modules