Microchip Technology MSCSM170AM029CT6LIAG

安装类型

底座安装

包装/外壳

Module

供应商器件包装

-

厂商

微芯片技术

Package

Bulk

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

676A (Tc)

Base Product Number

MSCSM170

Continuous Drain Current Id

676

Vds - Drain-Source Breakdown Voltage

1.7 kV

Typical Turn-On Delay Time

65 ns

Vgs th - Gate-Source Threshold Voltage

1.8 V

Pd - Power Dissipation

3000 W

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, 23 V

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

SMD/SMT

Manufacturer

Microchip

Brand

微芯片技术

Rds On - Drain-Source Resistance

2.9 mOhms

Typical Turn-Off Delay Time

148 ns

Id - Continuous Drain Current

676 A

系列

-

操作温度

-40°C ~ 175°C (TJ)

子类别

Discrete Semiconductor Modules

技术

Si

功率耗散

3

功率 - 最大

3kW (Tc)

场效应管类型

2 N Channel (Phase Leg)

Rds On(Max)@Id,Vgs

3.75mOhm @ 360A, 20V

不同 Id 时 Vgs(th)（最大值）

3.3V @ 30mA

输入电容(Ciss)(Max)@Vds

39600pF @ 1000V

门极电荷(Qg)(最大)@Vgs

2136nC @ 20V

上升时间

52 ns

漏源电压 (Vdss)

1700V (1.7kV)

产品类别

Discrete Semiconductor Modules

场效应管特性

Silicon Carbide (SiC)

产品

功率MOSFET模块

Vf-正向电压

1.5 V

产品类别

Discrete Semiconductor Modules