Microsemi W3H128M72E-667NBM

表面安装

YES

终端数量

208

ECCN (US)

4A994.a

Module

DRAM模块

Module Density

1Gbyte

Number of Chip per Module

5

Chip Density (bit)

1.8G

Data Bus Width (bit)

72

Max. Access Time (ns)

1.25

Maximum Clock Rate (MHz)

667

Chip Package Type

PBGA

Minimum Operating Supply Voltage (V)

1.7

Typical Operating Supply Voltage (V)

1.8

Maximum Operating Supply Voltage (V)

1.9

Operating Current (mA)

1375

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

125

Supplier Temperature Grade

Military

ECC Support

有

Number of Chip Banks

8

CAS Latency

6

SPD EEPROM Support

无

Supplier Package

BGA

Mounting

表面贴装

Package Height

3.94(Max)

Package Length

22.1(Max)

Package Width

16.1(Max)

PCB changed

208

Package Description

BGA,

Package Style

网格排列

Number of Words Code

128000000

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-55 °C

Access Time-Max

0.5 ns

Operating Temperature-Max

125 °C

Rohs Code

无

Manufacturer Part Number

W3H128M72E-667NBM

Number of Words

134217728 words

Supply Voltage-Nom (Vsup)

1.8 V

Package Code

BGA

Package Shape

RECTANGULAR

Manufacturer

Microsemi Corporation

Part Life Cycle Code

Transferred

Ihs Manufacturer

MICROSEMI CORP

Risk Rank

5.43

Part Package Code

BGA

ECCN 代码

EAR99

附加功能

AUTO/SELF REFRESH

HTS代码

8542.32.00.36

技术

CMOS

端子位置

BOTTOM

终端形式

BALL

功能数量

1

端子间距

1 mm

Reach合规守则

compliant

引脚数量

208

JESD-30代码

R-PBGA-B208

资历状况

不合格

电源电压-最大值(Vsup)

1.9 V

温度等级

MILITARY

电源电压-最小值(Vsup)

1.7 V

端口的数量

1

操作模式

SYNCHRONOUS

组织结构

128Mx72

内存宽度

72

记忆密度

9663676416 bit

锁相环

无

内存IC类型

DDR DRAM

访问模式

多库页面突发

自我刷新

有

RoHS状态

供应商未确认