Vishay Intertechnologies SI1902DL-T1-E3
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SI1902DL-T1-E3
2668-SI1902DL-T1-E3
晶体管 - 特殊用途
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Description: Small Signal Field-Effect Transistor, 0.66A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6 PIN
1最小包装量--
SI1902DL-T1-E3详情
Vishay Intertechnologies SI1902DL-T1-E3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Contact plating
gold-plated
表面安装
YES
Number of pins
32
终端数量
6
晶体管元件材料
SILICON
外壳材料
2
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
1.27mm
Electrical mounting
THT
Connector pinout layout
2x16
Row pitch
1.27mm
Gross weight
2.16 g
Rohs Code
有
Part Life Cycle Code
生命周期结束
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
ROHS COMPLIANT, SC-70, 6 PIN
Drain Current-Max (ID)
0.66 A
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Operating temperature
-40...163°C
JESD-609代码
e3
端子表面处理
哑光锡
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
Current rating
1.5A
时间@峰值回流温度-最大值(s)
30
JESD-30代码
R-PDSO-G6
资历状况
不合格
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
操作模式
增强型MOSFET
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.385 Ω
DS 击穿电压-最小值
20 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
0.27 W
Rated voltage
125V
个人资料
bronze
饱和电流
1
Plating thickness
0.254µm
Flammability rating
UL94V-0
SI1902DL-T1-E3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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