Vishay Intertechnologies SI2316BDS-T1-GE3
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SI2316BDS-T1-GE3
2668-SI2316BDS-T1-GE3
晶体管 - 特殊用途
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大陆
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Description: Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
1最小包装量--
SI2316BDS-T1-GE3详情
Vishay Intertechnologies SI2316BDS-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
13 Weeks
表面安装
YES
Housing material
nickel-plated brass
终端数量
3
晶体管元件材料
SILICON
外壳材料
1
Head and button shape
ring - cone; flat button
Gross weight
75.20
Transport packaging size/quantity
62*27.5*28/100
Indicator type
ring
Switching scheme
ON-(OFF) + OFF-(ON) without fixation
Switching cycles (electrical)
≥50000
Backlight voltage
12 V
Relative humidity
45...85 %
Dielectric strength
2000 (50 Hz / 5 s) V
LED operating life
≥40000 hours
Rohs Code
有
Part Life Cycle Code
不推荐
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
TO-236, SOT-23, 3 PIN
Drain Current-Max (ID)
4.5 A
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
JESD-609代码
e3
ECCN 代码
EAR99
端子表面处理
哑光锡
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
JESD-30代码
R-PDSO-G3
资历状况
不合格
Contact resistance
≤50 mΩ
配置
SINGLE WITH BUILT-IN DIODE
Insulation resistance
≥1000 MΩ
操作模式
增强型MOSFET
Switch type
GQ30 series vandal resistant button with backlight
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
Operating temperature range
-25…+55 °C
Rated current
5 A
JEDEC-95代码
TO-236AB
漏极-源极导通最大电阻
0.05 Ω
DS 击穿电压-最小值
30 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
1.66 W
Rated voltage
250 V
反馈上限-最大值 (Crss)
37 pF
饱和电流
1
触点
4Pin+2Pin
Backlight color
green
SI2316BDS-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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