Vishay Intertechnologies SIHG22N60E-GE3
- 收藏
- 对比
SIHG22N60E-GE3
2668-SIHG22N60E-GE3
晶体管 - 特殊用途
--
大陆
立即发货

Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
1最小包装量--
SIHG22N60E-GE3详情
Vishay Intertechnologies SIHG22N60E-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
Housing material
nickel-plated brass
终端数量
3
晶体管元件材料
SILICON
外壳材料
1
Gross weight
3.55
Transport packaging size/quantity
62*27.5*28/200
Emitter type
point flat
Indicator type
GQ6 series vandal-resistant indicator
Teral type
flexible leadsmin
Mounting diameter
6 mm
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Drain Current-Max (ID)
21 A
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
ECCN 代码
EAR99
颜色
red
端子位置
SINGLE
终端形式
THROUGH-HOLE
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
时间@峰值回流温度-最大值(s)
未说明
JESD-30代码
R-PSFM-T3
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
Rated current
15 mA
JEDEC-95代码
TO-247AC
漏极-源极导通最大电阻
0.18 Ω
脉冲漏极电流-最大值(IDM)
56 A
DS 击穿电压-最小值
600 V
雪崩能量等级(Eas)
367 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
227 W
Rated voltage
12-24 V
SIHG22N60E-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







哦! 它是空的。