Vishay Intertechnologies SI3493BDV-T1-GE3
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SI3493BDV-T1-GE3
2668-SI3493BDV-T1-GE3
晶体管 - 特殊用途
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Description: Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
1最小包装量--
SI3493BDV-T1-GE3详情
Vishay Intertechnologies SI3493BDV-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
Contact plating
gold-plated
Number of pins
24
终端数量
6
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
不推荐
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
Drain Current-Max (ID)
8 A
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
2.54mm
Electrical mounting
THT
Connector pinout layout
1x24
Gross weight
2.43 g
Operating temperature
-40...163°C
JESD-609代码
e3
ECCN 代码
EAR99
端子表面处理
Matte Tin (Sn)
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
Current rating
2A
时间@峰值回流温度-最大值(s)
30
JESD-30代码
R-PDSO-G6
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
晶体管应用
SWITCHING
极性/通道类型
P-CHANNEL
漏极-源极导通最大电阻
0.0275 Ω
DS 击穿电压-最小值
20 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
2.97 W
Rated voltage
150V
个人资料
beryllium copper
饱和电流
1
Plating thickness
0.75µm
Flammability rating
UL94V-0
SI3493BDV-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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