Vishay Intertechnologies SI7540ADP-T1-GE3
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SI7540ADP-T1-GE3
2668-SI7540ADP-T1-GE3
晶体管 - 特殊用途
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大陆
立即发货

Description: Power Field-Effect Transistor, 8A I(D), 20V, 0.015ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
1最小包装量--
SI7540ADP-T1-GE3详情
Vishay Intertechnologies SI7540ADP-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
17 Weeks, 3 Days
表面安装
YES
Housing material
nickel-plated brass
终端数量
6
晶体管元件材料
SILICON
外壳材料
2
Emitter type
point round
Indicator type
Vandal-resistant indicator series GQ8
Teral type
flexible leadsmin
Mounting diameter
8 mm
Gross weight
5.90
Transport package size/quantity
62*27.5*28/200
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SOP-8
Drain Current-Max (ID)
8 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
JESD-609代码
e3
ECCN 代码
EAR99
端子表面处理
Matte Tin (Sn)
颜色
red
端子位置
DUAL
终端形式
FLAT
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
时间@峰值回流温度-最大值(s)
30
JESD-30代码
R-PDSO-F6
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL AND P-CHANNEL
Rated current
15 mA
漏极-源极导通最大电阻
0.015 Ω
脉冲漏极电流-最大值(IDM)
35 A
DS 击穿电压-最小值
20 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
Rated voltage
12-24 V
饱和电流
1
SI7540ADP-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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