Vishay Intertechnologies SI7846DP-T1-GE3
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SI7846DP-T1-GE3
2668-SI7846DP-T1-GE3
晶体管 - 特殊用途
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大陆
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Power Field-Effect Transistor, 4A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
1最小包装量--
SI7846DP-T1-GE3详情
Vishay Intertechnologies SI7846DP-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
质量
1.2 g
终端数量
5
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Drain Current-Max (ID)
4 A
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
小概要
Type of bridge rectifier
single-phase
Max. off-state voltage
1.6kV
Max. forward impulse current
1kA
Electrical mounting
screw
Mechanical mounting
screw
Version
module - slim
Leads
M6 screws
Case
PWS-E flat
Gross weight
225 g
Transport Packaging Size/Quantity
31*31*17/1000
Resonance Frequency
900 Hz
Maximum Power
1 W
Allowed deviation of characteristics
15 %
JESD-609代码
e3
ECCN 代码
EAR99
类型
Electrodynamic Headphone (Speaker) S1300 series
端子表面处理
Matte Tin (Sn)
端子位置
DUAL
终端形式
C 弯管
深度
17 mm
Reach合规守则
compliant
JESD-30代码
R-XDSO-C5
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
阻抗
8 Ohm
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
Operating temperature range
-30...+70 °C
漏极-源极导通最大电阻
0.05 Ω
频率范围
900-10000 Hz
设计
with flexible leads 50 mm
脉冲漏极电流-最大值(IDM)
50 A
DS 击穿电压-最小值
150 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
5.2 W
Load current
84A
Sound pressure level (SPL)
90 dB
饱和电流
1
高度
3.7 mm
宽度
12 mm
SI7846DP-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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