Vishay Intertechnologies SIA445EDJ-T1-GE3
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SIA445EDJ-T1-GE3
2668-SIA445EDJ-T1-GE3
晶体管 - 特殊用途
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大陆
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Power Field-Effect Transistor, 12A I(D), 20V, 0.0165ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
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SIA445EDJ-T1-GE3详情
Vishay Intertechnologies SIA445EDJ-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
质量
0.2 kg
终端数量
6
晶体管元件材料
SILICON
外壳材料
1
Type of capacitor
ceramic
Kind of capacitor
MLCC
Mounting
SMD
Case - inch
1206
Case - mm
3216
Capacitors series
KGM
Gross weight
0.055 g
Transport Package size/quantity
28*25*20/50
Analog
POS40
Execution
tube
Melting Temperature
183...240 °C
Soldering Temperature
285...330 °C
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
Drain Current-Max (ID)
12 A
Package Body Material
PLASTIC/EPOXY
Package Shape
SQUARE
Package Style
小概要
Operating temperature
-55...125°C
包装
coil
容差
±5%
ECCN 代码
EAR99
类型
Sn/Pb lead-tin solder with flux, soft
电容量
1µF
端子位置
DUAL
终端形式
无铅
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
JESD-30代码
S-PDSO-N6
电介质
X7R
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
P-CHANNEL
漏极-源极导通最大电阻
0.0165 Ω
脉冲漏极电流-最大值(IDM)
50 A
DS 击穿电压-最小值
20 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
Operating voltage
50V
直径
0.6 mm
SIA445EDJ-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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