Vishay Intertechnologies SIR638DP-T1-GE3
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SIR638DP-T1-GE3
2668-SIR638DP-T1-GE3
晶体管 - 特殊用途
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Description: Power Field-Effect Transistor,
1最小包装量--
SIR638DP-T1-GE3详情
Vishay Intertechnologies SIR638DP-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
28 Weeks
表面安装
YES
Housing material
nickel-plated brass
终端数量
5
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SOP-8
Date Of Intro
2016-05-01
Drain Current-Max (ID)
100 A
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Turn-off Time-Max (toff)
120 ns
Turn-on Time-Max (ton)
82 ns
Gross weight
32.20
Transport packaging size/quantity
28.5*21*19/50
Indicator type
ring
Switching scheme
ON-(OFF) + OFF-(ON) non-latching
Protection class
IP65
Switching cycles (electrical)
50000 min
Backlight voltage
12 V
Relative humidity
45...85 %
Nominal voltage
250 V
Dielectric strength
2000 (50 Hz / 5 sec) V
LED service life
40000 hours min
Button head shape
flat ring and button
Installation diameter
22 mm
ECCN 代码
EAR99
端子位置
DUAL
终端形式
FLAT
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
unknown
时间@峰值回流温度-最大值(s)
未说明
JESD-30代码
R-PDSO-F5
Contact resistance
50 mΩ max
配置
SINGLE WITH BUILT-IN DIODE
Insulation resistance
1000 MΩ min
操作模式
增强型MOSFET
箱体转运
DRAIN
Switch type
GQ22 series vandal resistant button with backlight
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
Operating temperature range
-25…+55 °C
Rated current
5 A
漏极-源极导通最大电阻
0.00088 Ω
脉冲漏极电流-最大值(IDM)
400 A
DS 击穿电压-最小值
40 V
雪崩能量等级(Eas)
125 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
104 W
反馈上限-最大值 (Crss)
250 pF
触点
4Pin+2Pin
Backlight color
green
直径
25 mm
SIR638DP-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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