Vishay Intertechnologies SIR871DP-T1-GE3
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SIR871DP-T1-GE3
2668-SIR871DP-T1-GE3
晶体管 - 特殊用途
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大陆
立即发货

Power Field-Effect Transistor, 48A I(D), 100V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
1最小包装量--
SIR871DP-T1-GE3详情
Vishay Intertechnologies SIR871DP-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
28 Weeks
表面安装
YES
Housing material
plastic, grey
终端数量
5
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SOP-8
Date Of Intro
2016-07-19
Drain Current-Max (ID)
48 A
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Gross weight
15.00
Transport packaging size/quantity
62*27.5*28/1000
Color of wire insulation
green x 2; blue x 2; red/black - backlight
Relative humidity
45...85 %
JESD-609代码
e3
ECCN 代码
EAR99
端子表面处理
Matte Tin (Sn)
端子位置
DUAL
终端形式
FLAT
峰值回流焊温度(摄氏度)
260
Reach合规守则
not_compliant
时间@峰值回流温度-最大值(s)
30
JESD-30代码
R-PDSO-F5
Lead length
150 mm
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
Switch type
Terminal block for GQ25 series vandal-proof buttons
晶体管应用
SWITCHING
极性/通道类型
P-CHANNEL
Operating temperature range
-25…+60 °C
漏极-源极导通最大电阻
0.02 Ω
脉冲漏极电流-最大值(IDM)
300 A
DS 击穿电压-最小值
100 V
雪崩能量等级(Eas)
61 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
饱和电流
1
SIR871DP-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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