Vishay Intertechnologies SQ2337ES-T1_GE3

工厂交货时间

23 Weeks, 4 Days

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

外壳材料

1

Type of enclosure

shielding

Dimension X

156.3mm

Dimension Y

225mm

Dimension Z

87mm

Enclosure material

aluminium

Enclosure description

EMI/RFI shielding,

Enclosures application

designed for electronic circuits sensitive to electromagnetic interferences

Enclosure series

AW

Version

with fixing lugs

Dimensions

See

Rohs Code

有

Part Life Cycle Code

生命周期结束

Ihs Manufacturer

VISHAY INTERTECHNOLOGY INC

Package Description

SMALL OUTLINE, R-PDSO-G3

Drain Current-Max (ID)

2.2 A

Operating Temperature-Max

175 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

小概要

Turn-off Time-Max (toff)

39 ns

Turn-on Time-Max (ton)

23 ns

ECCN 代码

EAR99

端子位置

DUAL

终端形式

鸥翼

Reach合规守则

compliant

参考标准

AEC-Q101

JESD-30代码

R-PDSO-G3

资历状况

不合格

配置

SINGLE WITH BUILT-IN DIODE

操作模式

增强型MOSFET

极性/通道类型

P-CHANNEL

JEDEC-95代码

TO-236AB

漏极-源极导通最大电阻

0.29 Ω

脉冲漏极电流-最大值(IDM)

9 A

DS 击穿电压-最小值

80 V

雪崩能量等级（Eas）

6 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

3 W

反馈上限-最大值 (Crss)

38 pF

IP rating

IP68