Vishay Intertechnologies SQJ963EP-T1_GE3
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SQJ963EP-T1_GE3
2668-SQJ963EP-T1_GE3
晶体管 - 特殊用途
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大陆
立即发货

Description: Power Field-Effect Transistor, 8A I(D), 60V, 0.085ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
1最小包装量--
SQJ963EP-T1_GE3详情
Vishay Intertechnologies SQJ963EP-T1_GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
Housing material
plastic
终端数量
4
晶体管元件材料
SILICON
外壳材料
2
Transport packaging size / quantity
62*27.5*28/600
Relative humidity
45...85 %
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SMALL OUTLINE, R-PSSO-G4
Drain Current-Max (ID)
8 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Type of capacitor
ceramic
Kind of capacitor
MLCC
Mounting
SMD
Case - inch
1206
Case - mm
3216
Capacitors series
KGM
Gross weight
0.042 g
Operating temperature
-55...125°C
容差
±10%
ECCN 代码
EAR99
电容量
0.33nF
端子位置
SINGLE
终端形式
鸥翼
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
时间@峰值回流温度-最大值(s)
未说明
JESD-30代码
R-PSSO-G4
电介质
X7R
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
Switch type
Terminal block for vandal-proof buttons LAS1 series
极性/通道类型
P-CHANNEL
漏极-源极导通最大电阻
0.085 Ω
脉冲漏极电流-最大值(IDM)
25 A
DS 击穿电压-最小值
60 V
雪崩能量等级(Eas)
20 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
Operating voltage
1kV
触点
3 Wire (wired leads)
SQJ963EP-T1_GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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