Vishay Intertechnologies SI4946BEY-T1-GE3
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SI4946BEY-T1-GE3
2668-SI4946BEY-T1-GE3
晶体管 - 特殊用途
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大陆
立即发货

Power Field-Effect Transistor, 6.5A I(D), 60V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC, SOP-8
1最小包装量--
SI4946BEY-T1-GE3详情
Vishay Intertechnologies SI4946BEY-T1-GE3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
8
晶体管元件材料
SILICON
外壳材料
2
Type of capacitor
ceramic
Kind of capacitor
MLCC
Capacitance tolerance
±0.1pF
Mounting
SMD
Case - inch
0201
Case - mm
0603
Capacitors series
GCQ
Gross weight
0.03 g
Rohs Code
有
Part Life Cycle Code
不推荐
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
MS-012, SOIC, SOP-8
Drain Current-Max (ID)
6.5 A
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Turn-off Time-Max (toff)
55 ns
Turn-on Time-Max (ton)
35 ns
Operating temperature
-55...125°C
JESD-609代码
e3
ECCN 代码
EAR99
端子表面处理
Matte Tin (Sn)
电容量
9.8pF
端子位置
DUAL
终端形式
鸥翼
Reach合规守则
compliant
JESD-30代码
R-PDSO-G8
电介质
C0G (NP0)
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
操作模式
增强型MOSFET
极性/通道类型
N-CHANNEL
JEDEC-95代码
MS-012AA
漏极-源极导通最大电阻
0.041 Ω
脉冲漏极电流-最大值(IDM)
30 A
DS 击穿电压-最小值
60 V
雪崩能量等级(Eas)
7.2 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
3.7 W
反馈上限-最大值 (Crss)
44 pF
饱和电流
1
Operating voltage
50V
SI4946BEY-T1-GE3拓展信息
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies
Vishay Intertechnologies







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